RbSiBiS₄ is a quaternary chalcogenide ceramic compound composed of rubidium, silicon, bismuth, and sulfur. This is a research-phase material within the sulfide ceramic family, investigated primarily for photonic and optoelectronic applications due to the optical properties characteristic of bismuth-containing chalcogenides. The material represents an emerging class of wide-bandgap semiconductors that may offer advantages in infrared transparency, nonlinear optical response, or radiation hardness compared to conventional oxides, though engineering-scale production and standardized characterization remain limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1453 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.102 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 7.262 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8901 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data