RbSiAs is a ternary ceramic compound combining rubidium, silicon, and arsenic elements. This is a research-phase material within the broader family of III-V semiconductors and alkali-metal silicates; it has not achieved significant commercial production and remains primarily of academic interest. The material's potential relevance lies in exploratory semiconductor or photonic applications where unique band structure or optical properties might emerge from the alkali-metal dopant, though practical engineering applications remain underdeveloped compared to established alternatives like GaAs or SiGe.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.02240 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.418 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 2.106 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.017 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.6054 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data