RbSbS₂ is a ternary chalcogenide semiconductor compound combining rubidium, antimony, and sulfur, representing an emerging material in the broader family of layered sulfide semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its electronic band structure and layered crystal symmetry offer potential advantages in light absorption and charge transport. Its notable characteristic is the combination of relatively low mechanical stiffness with moderate density, making it worth exploring for flexible electronics and thin-film device architectures where brittle ceramics or stiff compounds would be unsuitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,073.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 1,765.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1364 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.100 | eV | — | ||
| ↳ | 1.949 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -300.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00360 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8337 | eV/atom | — |