RbNbOFN is a mixed-anion semiconductor compound containing rubidium, niobium, oxygen, and fluorine—a relatively uncommon composition in commercial materials. This material belongs to the family of oxynitride/oxyfluoride semiconductors, which are primarily investigated in research settings for photocatalytic and optoelectronic applications where conventional oxide semiconductors fall short. The incorporation of nitrogen and fluorine as anionic dopants can modify electronic band structure and light-absorption properties, making it of interest for photocatalysis, water splitting, and advanced semiconductor device research rather than established high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.100 | eV | — | ||
Magnetic Moment(μB) | 2.773e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.5200 | eV/atom | — |