RbInS₂ is a ternary semiconductor compound combining rubidium, indium, and sulfur into a chalcogenide structure. This material belongs to the family of III–VI semiconductors and remains largely in the research phase, studied for its potential in optoelectronic and photovoltaic applications where wide bandgap semiconductors with tunable properties are needed. Engineers would investigate RbInS₂ primarily in exploratory device research contexts rather than established commercial production, as its stability, processability, and performance relative to more mature alternatives (such as GaAs or CdTe) continue to be characterized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 32.40 | GPa | — | ||
Shear Modulus(G) | 6.560 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.756 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.300 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3005 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6866 | eV/atom | — |