RbInGeS4 is a quaternary chalcogenide semiconductor compound composed of rubidium, indium, germanium, and sulfur. This material belongs to the family of I-III-IV-VI semiconductors, which are primarily investigated in research contexts for nonlinear optical and infrared photonic applications. The compound is notable for its potential in mid-infrared optics and frequency conversion devices, where its wide bandgap and nonlinear optical properties offer advantages over traditional materials in specialized wavelength regions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.100 | eV | — |