RbIn2S2 is a ternary chalcogenide ceramic compound combining rubidium, indium, and sulfur in a layered crystal structure. This material is primarily of research interest rather than established commercial production, belonging to the broader family of semiconducting and optical chalcogenides that are investigated for photovoltaic, nonlinear optical, and radiation detection applications. The rubidium-indium-sulfide system is notable within materials research for its potential in mid-infrared optics and solid-state electronics, where layered geometries can offer favorable band structures and anisotropic optical properties compared to conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1409 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3020 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4981 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data