RbGaO2N is an oxynitride ceramic compound containing rubidium, gallium, oxygen, and nitrogen. This material belongs to the family of mixed-anion ceramics and remains primarily in the research and development phase, studied for its potential in photocatalysis and optoelectronic applications where nitrogen incorporation into oxide structures can modify electronic band structure and improve light absorption. The oxynitride class is of growing interest to materials scientists seeking alternatives to conventional oxides and nitrides for visible-light-driven catalysis, semiconductor devices, and energy conversion systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 1.306 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.040 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data