RbGaN3 — Properties & Data | MatWorld

RbGaN3

ceramic

· RbGaN3

RbGaN₃ is a rubidium gallium nitride ceramic compound belonging to the family of wide-bandgap semiconductors and nitride ceramics. This is a research-phase material currently under investigation for advanced optoelectronic and high-temperature applications, as the nitride family (including GaN-based compounds) offers exceptional thermal stability, chemical resistance, and electronic properties compared to conventional semiconductors. The rubidium-doped variant is being explored for specialized applications in ultraviolet emitters, high-power electronics, and extreme-environment sensors where conventional materials reach performance limits.

UV light emitters (research)High-temperature semiconductorsWide-bandgap electronicsExtreme environment sensorsResearch optoelectronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	5.000	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	2.280	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RbGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental