RbBiS2

Name: RbBiS2
Brand: MatWorld

semiconductor

· RbBiS2

RbBiS₂ is a ternary semiconductor compound combining rubidium, bismuth, and sulfur—a member of the chalcogenide semiconductor family with layered crystal structure. This is a research-stage material studied for its potential in optoelectronic and photovoltaic applications, where its band gap and electronic properties may offer advantages in light absorption or emission across specific wavelength ranges. While not yet commercialized at scale, rubidium-bismuth chalcogenides are of interest to materials scientists exploring alternatives to more conventional semiconductors (like CdTe or perovskites) for energy conversion and sensing applications, particularly where the unique electronic structure of bismuth-containing compounds could provide cost or stability benefits.

photovoltaic researchoptoelectronic devicesinfrared detectorssolid-state lightingthin-film semiconductorsmaterials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	6,051	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2600	-	DFT · OptB88vdW
Shear Modulus(G)	3,813	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1859	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.200	eV	Measured
↳	1.438	eV	DFT · OptB88vdW
↳	2.258	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)2 entries	51.65	-	DFT · OptB88vdW
↳	20.33 range 7.875–32.79median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	8.819	-	DFT · OptB88vdW
↳	6.478	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00106	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00250	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-96.68	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	427.4	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	17.50	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.9125	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

RbBiS2 — Properties & Data | MatWorld

RbBiS2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control