RbAsSe₂ is a ternary chalcogenide ceramic compound combining rubidium, arsenic, and selenium in a layered crystal structure. This material belongs to the family of chalcogenide semiconductors and is primarily of research interest rather than established in high-volume industrial production. The compound is investigated for potential applications in infrared optics, nonlinear optical devices, and solid-state photonics where its unique combination of optical transparency in the infrared spectrum and semiconductor properties may offer advantages over traditional alternatives like zinc selenide or gallium arsenide.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,933.4 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 941.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1432 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.607 | eV | DFT · OptB88vdW | ||
| ↳ | 2.385 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 6.984 | - | DFT · OptB88vdW | ||
| ↳ | 5.022 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 14.82 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6457 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data