RbAlN is an experimental ternary nitride compound combining rubidium, aluminum, and nitrogen, belonging to the class of metal nitrides and alkali-metal aluminum nitrides. This material remains primarily in research and development phase, studied for its potential in wide-bandgap semiconductor applications and advanced ceramic coatings. The inclusion of rubidium—a highly reactive alkali metal—makes RbAlN a notably unconventional composition within the nitride family, positioning it as an exploratory candidate for next-generation optoelectronic devices, high-temperature structural applications, or specialized catalytic systems where conventional AlN or other aluminum nitrides may have limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,586.7 | ksi | — | ||
Poisson's Ratio(ν) | 0.3200 | - | — | ||
Shear Modulus(G) | 361.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.07431 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 2.083 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.9737 | eV/atom | — |