Rb₈N₃O₁ is an experimental inorganic semiconductor compound combining rubidium, nitrogen, and oxygen elements. This mixed-anion material represents emerging research into novel ionic semiconductors and fast-ion conductors, with potential applications in solid-state energy storage and electrochemical devices where the rubidium mobility and oxygen-nitrogen bonding characteristics may enable enhanced ion transport. While not yet established in mainstream engineering practice, materials in this compound family are being investigated for next-generation battery electrolytes, fuel cells, and solid-state ionic devices where conventional semiconductor or oxide materials reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,147.3 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,522.9 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.058 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1110 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data