Rb₈Mg₄O₈ is an inorganic oxide semiconductor compound combining rubidium, magnesium, and oxygen in a crystalline structure. This material belongs to the family of mixed-metal oxides and appears to be primarily investigated in research settings rather than established in mainstream industrial production. Potential applications span optoelectronics, photocatalysis, and solid-state chemistry where mixed-valent or alkali-metal-containing oxides show promise for tailoring bandgap and electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.835 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.904 | eV/atom | — |