Rb8As8 is an experimental binary semiconductor compound composed of rubidium and arsenic in an 1:1 stoichiometric ratio. While not yet widely commercialized, this material belongs to the class of alkali metal arsenides, which are of research interest for potential optoelectronic and solid-state physics applications due to their unique electronic structure. The compound represents an exploratory material in semiconductor research rather than an established engineering material, with potential relevance in advanced device development if synthesis and properties can be optimized for scalability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,559 | ksi | — | ||
Shear Modulus(G) | 1,222.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05180 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5150 | eV/atom | — |