Rb₄Sb₄S₈ is a quaternary chalcogenide semiconductor compound combining rubidium, antimony, and sulfur in a layered crystal structure. This is a research-phase material studied for its potential in thermoelectric and solid-state electronic applications, belonging to the broader family of metal chalcogenides that show promise for energy conversion and optoelectronic devices. The material's structural arrangement and electronic properties make it of interest to materials scientists exploring alternatives to conventional semiconductors, though industrial applications remain largely exploratory.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.19 | GPa | — | ||
Shear Modulus(G) | 12.17 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.949 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8340 | eV/atom | — |