Rb4O12 is an experimental oxide semiconductor compound based on rubidium and oxygen, representing a member of the rare-earth and alkali-metal oxide family under active research investigation. This material belongs to an emerging class of oxide semiconductors being explored for potential applications in next-generation electronic devices where conventional semiconductors reach performance or environmental limitations. Research into Rb4O12 and similar alkali-metal oxides is driven by interest in transparent conducting oxides, wide-bandgap semiconductors, and materials with potential environmental advantages, though commercial adoption remains limited pending further development and characterization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,182.7 | ksi | — | ||
Shear Modulus(G) | 1,483.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.908 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7370 | eV/atom | — |