Rb₄NO is an experimental ionic compound composed of rubidium, nitrogen, and oxygen, classified as a semiconductor with potential applications in advanced materials research. This rubidium nitride oxide belongs to a class of materials being investigated for novel electronic and electrochemical properties, though commercial applications remain limited and largely confined to laboratory and research settings. Its viability compared to established semiconductors depends on achieving controlled synthesis, demonstrating reproducible properties, and identifying performance advantages in specific niche applications such as solid-state ionics or specialized electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,414.8 | ksi | — | ||
Shear Modulus(G) | 1,602.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.027 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2990 | eV/atom | — |