Rb₄I₂O is an inorganic semiconductor compound containing rubidium, iodine, and oxygen. This material belongs to the family of mixed-halide oxides and is primarily of research interest rather than established in high-volume commercial production. The compound shows potential for optoelectronic and ionic-conductivity applications given its hybrid ionic-covalent character, though practical engineering use remains limited and development-stage.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,232 | ksi | — | ||
Shear Modulus(G) | 1,124.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8543 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.445 | eV/atom | — |