Rb4I12 is an inorganic semiconductor compound composed of rubidium and iodine, likely belonging to the family of metal halide semiconductors. This material represents an emerging research compound being investigated for optoelectronic and photovoltaic applications, where halide semiconductors have shown promise as alternatives to conventional silicon-based devices due to their tunable bandgap and solution-processable properties.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,695.3 | ksi | — | ||
Shear Modulus(G) | 779.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.645 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8400 | eV/atom | — |