Rb4Ge4Bi4S16 is a quaternary chalcogenide semiconductor compound combining rubidium, germanium, bismuth, and sulfur elements. This is an experimental research material within the sulfide semiconductor family, studied for its potential in optoelectronic and photonic applications where layered chalcogenides offer tunable bandgaps and nonlinear optical properties. While not yet established in mainstream industrial production, compounds in this material class are of interest for next-generation infrared detectors, photovoltaics, and nonlinear optical devices where traditional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,595.3 | ksi | — | ||
Shear Modulus(G) | 2,223.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.772 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7260 | eV/atom | — |