Rb₄Bi₄F₁₆ is an inorganic halide compound belonging to the family of rare-earth and post-transition metal fluorides, specifically a rubidium bismuth fluoride with potential semiconductor properties. This material is primarily of research interest rather than established industrial production, being investigated for its electronic and ionic conduction characteristics within the broader context of halide-based functional materials. The bismuth fluoride family is notable for exploring new compositions that may offer advantages in solid-state ion transport, photonic applications, or other specialized electronic functions where traditional oxide semiconductors are insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.006 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.670 | eV/atom | — |