Rb3Tl1 is an intermetallic semiconductor compound composed of rubidium and thallium, representing an experimental material from the alkali-metal/post-transition-metal family. This compound exists primarily in research contexts rather than established industrial production, with potential applications in solid-state electronics and thermoelectric devices where unique band-gap properties might offer advantages in niche temperature or radiation environments. Engineers would consider this material only for specialized research programs or advanced device concepts where the combination of alkali and thallium chemistry provides performance unavailable from conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5.500 | GPa | — | ||
Shear Modulus(G) | 1.620 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3300 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.00300 | eV/atom | — |