Rb₃N₃O₆ is an inorganic ceramic semiconductor compound containing rubidium, nitrogen, and oxygen. This material belongs to the class of mixed-metal nitride oxides, which are primarily of research interest for exploring novel electronic and ionic transport properties. While not yet established in mainstream industrial production, compounds in this family are investigated for potential applications in solid-state ionics, photocatalysis, and advanced ceramics where the combination of ionic and electronic conductivity could offer advantages over conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,422.9 | ksi | — | ||
Shear Modulus(G) | 1,366.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.354 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.010 | eV/atom | — |