Rb3Mn1 is an intermetallic semiconductor compound combining rubidium and manganese, representing an emerging material in the broader family of alkali-metal manganides being investigated for functional electronic and magnetic applications. This material is primarily of research interest rather than established in high-volume industrial production, with potential applications in thermoelectric devices, magnetoelectronic systems, or advanced catalysis where its semiconducting properties and manganese-based functionality could be leveraged. Engineers would consider this compound in early-stage device development or novel material systems where conventional semiconductors are insufficient, though availability, scalability, and long-term stability characteristics would require careful evaluation against mature alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 609.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 206 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00310 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6590 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data