Rb3Hf1 is an intermetallic semiconductor compound combining rubidium and hafnium in a 3:1 stoichiometric ratio. This material belongs to the class of rare-earth and refractory intermetallics, representing a research-phase compound with limited commercial deployment; such materials are typically investigated for their electronic properties and potential applications in high-temperature semiconducting devices, though practical use remains largely experimental due to processing challenges and material stability concerns.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 996 | ksi | — | ||
Shear Modulus(G) | 588.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.072 | eV/atom | — |