Rb2TiAg2S4 is a ternary chalcogenide semiconductor compound containing rubidium, titanium, silver, and sulfur. This is a research-phase material studied for its potential in photovoltaic and optoelectronic applications due to its semiconductor bandgap and mixed-metal composition, which can offer tunable electronic properties compared to single-metal alternatives. The material represents an emerging class of multinary sulfides being explored for next-generation solar cells, photodetectors, and solid-state electronic devices where layered or complex crystal structures provide advantages in charge carrier transport and light absorption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1447 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.330 | eV | — | ||
| ↳ | 1.656 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.082 | eV/atom | — |