Rb2InAsI6 is a halide perovskite ceramic compound combining rubidium, indium, arsenic, and iodine in a structured lattice. This is a research-stage material primarily investigated for optoelectronic and photovoltaic applications, representing an emerging class of lead-free halide perovskites designed to overcome toxicity and stability limitations of conventional perovskite absorbers. The material's mixed-metal-halide composition offers tunable bandgap and potential for single-crystal or thin-film device fabrication, though engineering adoption remains limited pending demonstration of manufacturability, long-term stability, and competitive performance metrics against established alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1549 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.03120 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8155 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data