Rb2Hg3Ge2S8

semiconductor

· Rb2Hg3Ge2S8

Rb2Hg3Ge2S8 is an experimental quaternary chalcogenide semiconductor compound combining rubidium, mercury, germanium, and sulfur elements. This material belongs to the family of complex metal sulfides being investigated for potential optoelectronic and photovoltaic applications due to the tunable bandgap and crystal structure characteristics of multinary chalcogenide systems. Research into such compounds focuses on exploring alternatives to conventional semiconductors in niche applications where specific optical or electronic properties are required, though the material remains in developmental stages with limited commercial deployment.

experimental semiconductor researchchalcogenide optoelectronicsphotovoltaic developmentsolid-state physics researchnon-linear optical materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.606	kg/m³	—

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Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	2.800	eV	—
↳	1.666	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.5336	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb2Hg3Ge2S8

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control