Rb2GeSe3

ceramic

· Rb2GeSe3

Rb2GeSe3 is a mixed-halide chalcogenide ceramic compound composed of rubidium, germanium, and selenium. This material belongs to the family of layered chalcogenide semiconductors, which are primarily of research interest for their potential in infrared optics, nonlinear optical applications, and solid-state ion conductivity. While not yet established in mainstream industrial production, rubidium germanium selenides are studied for next-generation photonic devices and solid-state electrolytes where their tunable bandgap and anisotropic crystal structure offer advantages over conventional oxides.

infrared optics and windowsnonlinear optical devicessolid-state electrolytes (research)wide-bandgap semiconductorsphotonic materials developmentneutron scattering host materials (research)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1409	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.351	eV	DFT · OptB88vdW
↳	2.356	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	6.715 range 4.376–9.053median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	5.310	-	DFT · OptB88vdW
↳	4.080	-	DFT · TBmBJ
Electron Effective Mass(m*e)	1.377	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.823	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000976	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000748	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-209.9	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	326.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	15.46	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.9215	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb2GeSe3 — Properties & Data | MatWorld

Rb2GeSe3

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental