Rb₂Cd₃Se₄ is a ternary chalcogenide semiconductor compound combining rubidium, cadmium, and selenium in a layered crystal structure. This material remains primarily in the research phase, studied for its potential in infrared optics, photovoltaic devices, and nonlinear optical applications where its wide bandgap and anisotropic properties offer advantages over conventional semiconductors. The rubidium-cadmium-selenide family is notable for tunable electronic properties and strong light-matter interactions, making it a candidate for next-generation photodetectors and frequency conversion devices in specialized optical systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.917 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.370 | eV | — | ||
| ↳ | 1.460 | eV | — | ||
Seebeck Coefficient(S) | -48.29 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8852 | eV/atom | — |