Rb2Bi4Se7 is a layered bismuth selenide ceramic compound belonging to the family of topological materials and chalcogenide semiconductors. This is a research-phase material primarily investigated for its electronic and thermal transport properties rather than established industrial production. The material and related bismuth chalcogenide compounds are of significant interest in thermoelectric applications, topological electronics, and quantum material research, where their unique electronic band structure and potential for high thermoelectric efficiency make them candidates for next-generation energy conversion and advanced sensor technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.118 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7420 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6792 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data