Rb₂V₂I₄O₁₆ is an inorganic mixed-valence semiconductor compound combining rubidium, vanadium, iodine, and oxygen in a layered crystal structure. This material remains primarily in research and development stages, studied for its potential in solid-state ionics, photocatalysis, and advanced semiconductor applications due to the electronic properties arising from vanadium's multiple oxidation states and the hybrid organic-inorganic framework. Engineers and researchers investigate such compounds as alternatives to conventional semiconductors in niche applications requiring specific band gaps, ion transport pathways, or redox-active behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.577 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.257 | eV/atom | — |