Rb₂U₃I₄O₂₀ is a complex mixed-halide uranium oxide semiconductor containing rubidium and iodine; it is an experimental compound primarily investigated in fundamental materials research rather than established industrial production. This material belongs to the family of halide-based uranium compounds and is of interest to researchers studying novel semiconductor architectures, radiation detection, and uranium-based functional materials, though its practical engineering applications remain largely in the exploratory phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.122 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.802 | eV/atom | — |