Rb₂TlInF₆ is a halide perovskite semiconductor compound combining rubidium, thallium, and indium fluoride components. This is primarily a research material explored for its semiconducting properties within the broader family of mixed-metal halide perovskites, which show promise for optoelectronic and photovoltaic applications due to their tunable bandgaps and ionic conductivity. Engineers and materials researchers investigate such compounds for potential use in next-generation solar cells, scintillators, and radiation detection devices, though industrial adoption remains limited and the material requires further development to understand long-term stability and manufacturability at scale.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.77 | GPa | — | ||
Shear Modulus(G) | 11.02 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.674 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.623 | eV/atom | — |