Rb₂Sb₄Se₈ is a mixed-halide quaternary semiconductor compound composed of rubidium, antimony, and selenium. This material belongs to the family of layered chalcogenides and represents an emerging research compound being investigated for solid-state optoelectronic and photovoltaic applications. While not yet established in high-volume industrial production, materials in this chemical family are of interest for next-generation thin-film solar cells, radiation detection, and mid-infrared optical devices due to their tunable bandgap and layered crystal structure, offering potential advantages over conventional silicon-based alternatives in specialized niche applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,551.8 | ksi | — | ||
Shear Modulus(G) | 2,006.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.143 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5390 | eV/atom | — |