Rb2 In4 O7

semiconductor

· Rb2 In4 O7

Rb2In4O7 is an indium oxide semiconductor compound doped with rubidium, belonging to the family of metal oxide semiconductors with potential applications in optoelectronic and catalytic devices. This material is primarily of research and development interest rather than established industrial use, with potential applications in transparent conducting oxides, photocatalysis, and advanced optoelectronic components where the specific band gap and electrical properties of rubidium-indium oxide systems offer advantages over conventional alternatives. Engineers would consider this compound for specialized applications requiring unique combinations of optical transparency and semiconductor behavior, though material availability and processing methods remain active areas of investigation.

transparent conducting filmsphotocatalytic applicationsoptoelectronic devicesresearch-stage semiconductorsoxide-based electronicsgas sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	13,354.8	ksi	—
Shear Modulus(G)	6,020.1	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.655	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.699	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb2 In4 O7

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control