Rb₂In₂Te₄ is a quaternary semiconductor compound combining rubidium, indium, and tellurium in a layered crystal structure. This material belongs to the family of metal chalcogenides and is primarily of research interest for its potential in optoelectronic and thermoelectric applications, rather than a widely commercialized engineering material. The compound's notable characteristics within this material family—including its electronic band structure and layered topology—make it a candidate for next-generation photovoltaic devices, infrared detectors, and solid-state cooling systems, though widespread industrial adoption remains limited compared to conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19.49 | GPa | — | ||
Shear Modulus(G) | 12.07 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.203 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7570 | eV/atom | — |