Rb2 In1 Ga1 F6

semiconductor

· Rb2 In1 Ga1 F6

Rb₂InGaF₆ is a mixed-metal halide perovskite semiconductor compound combining rubidium, indium, gallium, and fluorine. This is an experimental research material being investigated for next-generation optoelectronic and photonic applications, particularly as a lead-free alternative in perovskite-based devices where stability and non-toxicity are priorities. The dual-metal composition (indium and gallium) offers potential tuning of electronic bandgap and structural properties compared to single-metal halide perovskites, making it relevant for solid-state lighting, photodetection, and quantum dot applications where conventional lead halides present environmental or regulatory constraints.

lead-free perovskite semiconductorsphotonic devices and LEDsphotodetectors and sensorsquantum dot precursorsradiation detectionresearch and development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.308	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.703	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb2 In1 Ga1 F6

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control