Rb2 H4 N2
semiconductorRb₂H₄N₂ is an experimental hydrogen-nitrogen compound incorporating rubidium, classified as a semiconductor material from the family of hydride-nitride systems. This compound belongs to an emerging research area focused on materials for energy storage, hydrogen catalysis, and potential solid-state ionic applications, though it remains largely in developmental stages without established commercial production or deployment. The material's notable feature is its incorporation of hydrogen in a stable crystalline framework with nitrogen and an alkali metal, positioning it as a candidate for next-generation technologies in hydrogen economy applications, though practical engineering use remains limited and requires further development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17.36 | GPa | — | ||
Shear Modulus(G) | 10.41 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.208 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3840 | eV/atom | — |