Rb2 Bi2 O5

semiconductor

· Rb2 Bi2 O5

Rb₂Bi₂O₅ is a mixed-metal oxide semiconductor composed of rubidium and bismuth, belonging to the family of bismuth-based oxide compounds. This material is primarily investigated in research contexts for photocatalytic and optoelectronic applications, where its narrow bandgap and layered crystal structure offer potential advantages over conventional semiconductors for visible-light-driven processes. While not yet widely deployed in mainstream industrial applications, materials in this compositional family are of growing interest for environmental remediation and next-generation electronic devices that operate efficiently under ambient light conditions.

Photocatalysis researchEnvironmental remediationOptoelectronic devicesSolar energy conversionSemiconductor researchVisible-light applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00970	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb2 Bi2 O5

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control