Rb₂Al₂As₄O₁₄ is an inorganic semiconductor compound belonging to the rare arsenate oxide family, combining rubidium, aluminum, and arsenic in an ordered crystalline structure. This is a research-phase material studied primarily for its potential in optoelectronic and photonic applications, particularly in nonlinear optical devices and specialized radiation detection systems where its layered crystal structure and wide bandgap properties may offer advantages over conventional semiconductors. While not yet widely commercialized, arsenate-based compounds are attracting interest in advanced materials research for high-frequency electronics and environments requiring chemical stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.269 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.898 | eV/atom | — |