Rb1Zn4As3 is a ternary intermetallic semiconductor compound containing rubidium, zinc, and arsenic. This material belongs to the family of alkali-metal transition-metal pnicogenides and is primarily of research interest for fundamental studies of electronic structure and potential thermoelectric or optoelectronic applications. Compounds in this chemical family are investigated for their semiconducting properties, crystal structure complexity, and potential use in specialized electronic devices, though Rb1Zn4As3 remains largely experimental rather than established in production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3775 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3110 | eV/atom | — |