Rb1Tl2Bi1 is an intermetallic semiconductor compound combining rubidium, thallium, and bismuth in a fixed stoichiometric ratio. This is a research-phase material studied primarily for its electronic and optoelectronic properties within the broader family of bismuth-based semiconductors and heavy-element intermetallics. The compound is not widely deployed in production applications but is of interest to materials researchers investigating novel band structures, thermoelectric performance, and potential quantum material behavior in systems containing heavy elements with strong spin-orbit coupling.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,625.9 | ksi | — | ||
Shear Modulus(G) | 1,000.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04960 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2370 | eV/atom | — |