RbTe is a binary compound semiconductor composed of rubidium and tellurium, belonging to the family of alkali metal chalcogenides. This material is primarily of research and academic interest rather than established industrial production, with potential applications in optoelectronic and thermoelectric devices that exploit the electronic and phonon properties of this material family.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,281.2 range 942.7–1,619.6median of 2 measurements | ksi | — | ||
Shear Modulus(G) | 85.57 range -252.4–423.5median of 2 measurements | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.108 range 2.982–3.234median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3740 range -0.4940–-0.2540median of 2 measurements | eV/atom | — |