Rb₁Sn₁S₂ is an experimental ternary semiconductor compound composed of rubidium, tin, and sulfur, belonging to the broader class of metal chalcogenides. This material is primarily of research interest rather than established industrial use, with potential applications in solid-state electronics, photovoltaics, and thermoelectric devices where layered or mixed-metal sulfide semiconductors show promise for tunable bandgaps and ion-transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 38.19 | GPa | — | ||
Shear Modulus(G) | 16.83 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.284 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8130 | eV/atom | — |