Rb1 Os1 O3

semiconductor

· Rb1 Os1 O3

RbOsO₃ is a mixed-metal oxide semiconductor compound combining rubidium, osmium, and oxygen in a perovskite-related crystal structure. This is a research-phase material studied primarily for its electronic and catalytic properties rather than established industrial production. The compound represents exploration within the osmium oxide family for potential applications in high-temperature electronics, catalysis, or exotic semiconductor devices, though practical engineering deployment remains limited and material availability is restricted to specialized synthesis.

research semiconductorscatalytic materials (experimental)high-temperature electronics (exploratory)oxide perovskitesmaterials science investigationlaboratory synthesis only

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00370	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.353	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 Os1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control