Rb1 N3

semiconductor

· Rb1 N3

Rb1N3 is an experimental semiconductor compound in the rubidium nitride family, synthesized for research into wide-bandgap semiconductor materials and nitrogen-based electronic devices. This material belongs to an emerging class of nitride semiconductors being investigated for high-energy physics applications, potential optoelectronic devices, and extreme-environment electronics where conventional semiconductors reach their limits. As a research compound with limited commercial deployment, Rb1N3 represents exploratory work in nitride chemistry rather than an established engineering material, making it relevant primarily for academic material development and specialized R&D projects rather than mainstream industrial manufacturing.

experimental semiconductorsnitride compound researchhigh-energy physics applicationsextreme-environment electronicsadvanced material development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	3,600.1	ksi	—
Shear Modulus(G)	985.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.954	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1890	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 N3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control