RbGeI₃ is a halide perovskite semiconductor compound composed of rubidium, germanium, and iodine. This material belongs to the broader family of metal halide perovskites, which are primarily investigated in photovoltaic and optoelectronic research rather than established industrial production. RbGeI₃ is notable as a lead-free alternative perovskite variant, offering potential advantages for solar cells and light-emitting devices where toxicity concerns and stability improvements over conventional lead-based perovskites are priorities.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.67 | GPa | — | ||
Shear Modulus(G) | 12.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.079 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8190 | eV/atom | — |