Rb1 Ge1 I1 O6

semiconductor

· Rb1 Ge1 I1 O6

RbGeIO6 is a mixed-metal halide perovskite semiconductor composed of rubidium, germanium, iodine, and oxygen. This is a research-stage compound within the broader family of halide perovskites, which are being actively investigated for optoelectronic applications due to their tunable bandgap, solution processability, and potential for low-cost device fabrication. The inclusion of germanium and the specific perovskite framework make this variant of particular interest for exploring alternatives to lead-based perovskites, addressing toxicity concerns while maintaining semiconducting properties relevant to photovoltaic and light-emission technologies.

perovskite solar cellslead-free semiconductorsoptoelectronic devicesthin-film photovoltaicsmaterials researchnext-generation semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	70.96	GPa	—
Shear Modulus(G)	34.91	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.526	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.130	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Rb1 Ge1 I1 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control